NSVBSP19AT1G

Single Bipolar Transistors Overview

NSVBSP19AT1G is an NPN silicon amplifier transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 350 V and a maximum DC collector current of 100 mA. The device utilizes a SOT-223 surface-mount package, measuring approximately 6.5 mm x 4.5 mm. Designed for high-voltage applications, it operates within a temperature range of -55°C to +150°C. This component serves as a robust switching and amplification element in circuits requiring high voltage tolerance and moderate current handling capabilities.

Single Bipolar Transistors Feature Summary

• High voltage capability with 350 V collector-emitter breakdown rating
• Compact SOT-223 surface-mount package design
• Wide operating temperature range from -55°C to +150°C
• Suitable for general-purpose amplification and switching

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• High-voltage switching applications
• Industrial control systems
• Consumer electronics power management

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the latest official onsemi documentation before integration. Confirm that the SOT-223 footprint matches the target PCB layout requirements. Ensure thermal management strategies account for the device's power dissipation limits under expected load conditions. Cross-reference pinout configurations to prevent installation errors during assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require an NPN transistor capable of handling 350 V collector-emitter voltages. The 100 mA continuous current rating makes it suitable for moderate load applications. Consider the SOT-223 package for space-constrained surface-mount designs. Evaluate thermal performance needs given the wide operating temperature range and potential power dissipation in high-voltage switching scenarios.

Single Bipolar Transistors Part Context

The NSVBSP19AT1G belongs to onsemi's portfolio of bipolar junction transistors (BJTs). It is part of the broader category of discrete semiconductor devices used for signal amplification and switching. As an NPN silicon transistor, it complements other components in electronic circuits requiring reliable high-voltage performance. The SOT-223 packaging standardizes its integration into modern printed circuit board assemblies.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other NPN transistors with similar 350 V breakdown voltage and SOT-223 packaging. Verify equivalent current ratings and thermal characteristics when considering alternative manufacturers. Ensure pin compatibility and electrical parameters match the original design specifications to maintain circuit functionality.