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The NSVMBD770DW1T1G is a dual isolated Schottky barrier rectifier manufactured by onsemi. It features two independent diodes within an SC-88 (SOT-363) surface-mount package. The device supports a maximum repetitive reverse voltage of 70 V and a forward current of 10 mA per diode. Key electrical characteristics include a low forward voltage of 1 V at rated current, a peak forward surge current capability of 1 A, and a maximum reverse leakage current of 200 nA. It operates reliably across a temperature range from -55 °C to +125 °C.
Verify the complete part number including the suffix 'T1G' to ensure correct tape-and-reel packaging and lead-free compliance. Confirm that the SC-88 footprint matches the PCB design. Cross-reference the datasheet revision date to ensure alignment with specific manufacturing lot requirements or environmental compliance standards.
Select this component when a dual isolated Schottky topology is required in a minimal footprint. Compare against single-diode alternatives if space permits, noting that the MBD770DW series offers similar performance. Ensure the 10 mA continuous current rating meets the circuit's operational demands without requiring derating due to thermal constraints.
This component belongs to the MBD770DW family of small-signal Schottky diodes from onsemi. These devices are designed for high-speed switching and low-loss rectification in consumer electronics and communication equipment. The family emphasizes miniaturization through the SC-88 package while maintaining robust electrical performance for sensitive analog and RF signals.
The MBD770DWT1G is a verified equivalent part number within the same product line. Verify pinout compatibility and package dimensions before substitution. Other variants in the MBD770 series may offer different configurations such as common cathode arrangements.