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Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The onsemi NSVMMBTH10LT1G is a surface-mount NPN bipolar junction transistor housed in a compact SOT-23 package with three terminals. It features a maximum DC collector current (Idc) of 500 mA and a collector-emitter voltage (Vceo) rating of 25 V. The device supports a collector-base voltage (VCBO) of 30 V DC and an emitter-base voltage (VEBO) of 25 V. Key electrical characteristics include a minimum DC current gain (hFE) of 60, a maximum power dissipation (Pd) of 225 mW, and a transition frequency (ft) of 100 MHz. The component operates within a temperature range from -55°C to 150°C.
Feature Summary
- Compact SOT-23 surface-mount configuration for space-constrained designs
- High-speed switching capability supported by 100 MHz transition frequency
- Robust thermal performance allowing operation up to 150°C junction temperature
Applications
- General-purpose signal amplification circuits
- Switching applications in low-power electronic devices
- Driver stages for small-signal processing
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct tape-and-reel specifications and marking codes. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement decisions.
Selection Notes
Select this component when a small-form-factor NPN transistor is required for low-voltage applications. Ensure the design accounts for the 225 mW power dissipation limit and verify that the 500 mA current rating exceeds peak load requirements under all operating conditions.
Part Context
This part belongs to the MMBT series of small-signal transistors manufactured by onsemi. These components are designed for general-purpose use in consumer electronics and industrial control systems where reliable switching and amplification are needed in minimal footprint packages.
Replacement Considerations
Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter margins before replacing the original component in existing designs.
