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The NTA4153NT1H is an N-channel enhancement mode MOSFET from onsemi, designed for surface-mount applications in the SC-75 package. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 915 mA at 25°C. The device includes built-in ESD protection and has a maximum power dissipation of 300 mW. Key electrical parameters include a gate-source threshold voltage of 1.1 V @ 250 uA and a typical on-resistance (Rds(on)) of 230 mΩ @ 600 mA, 4.5 V.
Verify the specific suffix 'H' against official onsemi documentation to confirm tape-and-reel quantity or variant specifications, as standard datasheets often list 'T1G'. Ensure the component matches the SC-75 package outline and pin configuration required for your PCB layout. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity.
Select this component for low-voltage, low-current switching tasks requiring compact packaging. The 20 V rating suits single-cell battery applications. Verify that the 915 mA current limit meets load requirements and that the thermal performance of the SC-75 package is sufficient for the expected power dissipation under operating conditions.
This part belongs to the NTA series of small signal MOSFETs from onsemi. These devices are engineered for high-density circuit designs where space is limited. The NTA4153 variant specifically targets applications needing efficient switching with minimal voltage drop, leveraging the SC-75 footprint for reliable surface-mount assembly.
Check for direct substitutes like NTA4153NT1G if the 'H' suffix denotes a specific reel size rather than a functional change. Ensure any replacement maintains the 20 V Vds, 915 mA Id, and SC-75 package dimensions to fit existing footprints without redesign.