NTB60N06T4G

Single FETs, MOSFETs Overview

The NTB60N06T4G is a P-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 27 A. The device utilizes a D2PAK (TO-263) surface-mount package with three pins. Key electrical parameters include a maximum drain-source on-resistance (Rds(on)) of 82 mΩ, a typical gate charge of 33 nC at 10 V, and a maximum power dissipation of 120 W. The component operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• P-channel enhancement mode configuration for high-side switching applications
• D2PAK (TO-263) surface-mount package designed for efficient thermal management
• Avalanche energy capability specified for robust operation in inductive loads

Single FETs, MOSFETs Applications

• Power supply circuits
• DC-DC converters
• Power motor controls
• Bridge circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T4G' against official datasheets to confirm tape-and-reel packaging and lead-free compliance. Ensure the part number matches the P-channel specification, as similar prefixes may denote N-channel variants. Cross-reference the manufacturer's latest documentation to confirm current production status and any potential obsolescence notices before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-speed switching applications requiring P-channel topology. Evaluate the 82 mΩ Rds(on) against thermal constraints for the expected load current. Confirm that the 60 V breakdown voltage provides adequate margin for the system's operating voltage. Verify compatibility with the driving circuit's gate voltage levels relative to the specified threshold characteristics.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's family of power MOSFETs optimized for general-purpose switching. It shares the D2PAK footprint with other high-current variants in the series, facilitating design reuse across different voltage and current ratings. The component is designed for use in environments requiring reliable performance under significant thermal stress.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the P-channel type, 60 V rating, and D2PAK package. Verify equivalent or lower Rds(on) and compatible gate charge specifications to ensure identical switching performance. Check for pinout compatibility and thermal resistance values to maintain system reliability.