NTBG023N065M3S

$9.15

Description：SIC MOS D2PAK-7L 23MOHM 650V M3S
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b30e951ab3a7 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTBG023N065M3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SIC MOS D2PAK-7L 23MOHM 650V M3S. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTBG023N065M3S

Description：SIC MOS D2PAK-7L 23MOHM 650V M3S
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V, 18V
Rds On (Max) @ Id, Vgs：33mOhm @ 20A, 18V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：69 nC @ 18 V
Vgs (Max)：+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1951 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：263W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Single FETs, MOSFETs datasheet and documents for NTBG023N065M3S

NTBG023N065M3S

Single FETs, MOSFETs Overview

The NTBG023N065M3S is a Silicon Carbide (SiC) MOSFET from onsemi's EliteSiC M3S series, housed in a D2PAK-7L package. It features a 650 V drain-to-source voltage and a typical RDS(ON) of 23 mΩ at VGS = 18 V. The device supports a continuous drain current of 70 A at TC = 25 °C and operates within a junction temperature range of -55 °C to 175 °C. Key electrical parameters include a total gate charge of 69 nC, an output capacitance of 153 pF, and a thermal resistance (junction-to-case) of 0.57 °C/W.

Single FETs, MOSFETs Feature Summary

Ultra-low gate charge for high-speed switching with low capacitance
100% avalanche tested for robust performance
Halide-free and RoHS compliant construction

Single FETs, MOSFETs Applications

Switch Mode Power Supplies (SMPS)
Solar Inverters
Uninterruptible Power Supplies (UPS)
Energy Storage Systems
EV Charging Infrastructure

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and packaging configuration against official documentation before procurement. Confirm that the component meets all required environmental standards and compliance certifications for the intended application. Ensure compatibility with the designated mounting footprint and thermal management requirements specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component based on its low on-resistance and fast switching characteristics suitable for high-frequency power conversion. Evaluate the thermal resistance and maximum current ratings against the system's heat dissipation capabilities. Consider the gate charge requirements for driver selection to optimize switching losses and efficiency.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's EliteSiC M3S family of silicon carbide MOSFETs. These devices are engineered for high-efficiency power applications requiring low conduction and switching losses. The D2PAK-7L package provides a compact solution with enhanced thermal performance compared to standard packages.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 650V rating, D2PAK-7L package, and similar electrical characteristics. Verify pinout compatibility and thermal resistance values. Consult onsemi documentation for alternative parts within the EliteSiC portfolio that meet specific design constraints.