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The NTD4860NT4H is a single N-channel enhancement mode MOSFET from onsemi, designed for surface-mount applications. It features a DPAK (TO-252) package with three pins. The device supports a maximum drain-source voltage of 25 V and a continuous drain current of 65 A. Key electrical parameters include a maximum power dissipation of 79 W and a maximum gate-source voltage range of -20 V to +20 V. The component operates within a temperature range of -55 °C to +175 °C, with physical dimensions of 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
Verify the specific part number suffix against official onsemi documentation to confirm exact ordering specifications. Ensure that the procurement channel provides authentic components with traceable manufacturing data. Cross-reference the datasheet version to confirm compliance with current technical standards before integration into production designs.
Select this component based on its 25 V rating and 65 A current capacity for low-voltage high-current applications. Consider the DPAK package for efficient heat dissipation in space-constrained designs. Evaluate the thermal resistance characteristics relative to the expected operating environment and load conditions to ensure reliable performance.
This MOSFET belongs to onsemi's discrete semiconductor product line, focusing on power management solutions. It is engineered for industrial and automotive sectors requiring robust switching capabilities. The component complements other power devices in onsemi's portfolio, supporting efficient energy conversion and distribution systems.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official onsemi documentation or authorized distributors for verified cross-reference information before considering alternative components.
The maximum operating temperature is +175 °C.
Yes, the maximum gate-source voltage range includes -20 V.