NTGD3149CT1G

FET, MOSFET Arrays Overview

The NTGD3149CT1G is a dual complementary MOSFET array manufactured by onsemi. It integrates one N-channel and one P-channel enhancement-mode transistor in a single SC-88 (SOT-363) surface-mount package. The device features a drain-source breakdown voltage of 20 V for both channels. Continuous drain current ratings are specified at 3.5 A for the N-channel and 3.9 A for the P-channel. The on-resistance is characterized at 60 mOhms for the N-channel and 55 mOhms for the P-channel. Gate-source voltage limits are ±12 V. The component supports a maximum power dissipation of 3.1 W and operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel enhancement-mode transistors in a compact dual configuration.
• Provides low on-resistance characteristics suitable for efficient switching applications.
• Supports high continuous current handling capabilities relative to its small footprint.

FET, MOSFET Arrays Applications

• DC-DC converter output stages
• Motor driver circuits
• Load switch implementations

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and electrical parameter tolerances against the manufacturer's official documentation prior to integration. Confirm that the SC-88 package dimensions align with the target PCB layout constraints. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions. Cross-reference ordering information to confirm availability and lead times through authorized distribution channels.

FET, MOSFET Arrays Selection Notes

Select this component when a complementary pair is required in a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Consider the specific on-resistance values for efficiency requirements. Evaluate the thermal performance within the system enclosure. Compare gate charge specifications against drive capability requirements for optimal switching speed.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of surface-mount MOSFET arrays designed for space-constrained designs. The SC-88 package offers a compact solution compared to discrete components. It serves as an alternative to using separate N-channel and P-channel devices, simplifying board layout and reducing assembly steps in complementary circuit topologies.

FET, MOSFET Arrays Replacement Considerations

Compatible substitutes include other dual complementary MOSFETs in SC-88 packages with matching 20 V ratings and similar current capabilities. Verify pinout compatibility and electrical parameters such as Rds(on) and threshold voltage before substitution.