FET, MOSFET Arrays NTGD4161PT1G product image

NTGD4161PT1G

  • Description:MOSFET 2P-CH 30V 1.5A 6TSOP
  • Series:-

SKU:b31add426faa Category: Brand:

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NTGD4161PT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 1.5A 6TSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTGD4161PT1G

  • Description:MOSFET 2P-CH 30V 1.5A 6TSOP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1.5A
  • Rds On (Max) @ Id, Vgs:160mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:281pF @ 15V
  • Power - Max:600mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTGD4161PT1G

NTGD4161PT1G

FET, MOSFET Arrays Overview

The NTGD4161PT1G is a dual P-channel MOSFET array manufactured by onsemi, designed for surface-mount applications. It features a 30V drain-source voltage rating and supports continuous drain currents of 1.5A. The device utilizes a 6-TSOP package with a power dissipation capacity of 600mW. Key electrical parameters include a gate-source threshold voltage of 500mV, a maximum gate-source voltage range of -12V to +12V, and an operating temperature range from -55°C to +150°C. The component exhibits low gate charge characteristics and fast switching times, making it suitable for compact circuit designs requiring efficient power management.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration integrated into a single compact surface-mount package
  • Logic-level gate drive capability enabling direct interface with standard logic outputs
  • Enhanced thermal performance within a small footprint TSOP-6 housing

FET, MOSFET Arrays Applications

  • Compact surface-mount power switching circuits
  • Low-voltage DC-DC converter topologies
  • Battery-powered portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'PT1G' to ensure correct tape-and-reel packaging configuration as defined by the manufacturer. Confirm RoHS compliance status through official onsemi documentation prior to integration. Cross-reference the exact part number against distributor catalogs to avoid confusion with similar variants in the NTGD series that may differ in channel type or current ratings.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a minimal board area. Ensure the application voltage does not exceed the 30V Vds limit. Consider the 600mW power dissipation constraint for thermal design. Verify that the logic level compatibility matches the driving circuit's output voltage swing to guarantee reliable turn-on and turn-off transitions.

FET, MOSFET Arrays Part Context

This device belongs to the NTGD series of dual MOSFET arrays from onsemi. It complements other components in the lineup by offering a specialized P-channel option in a 6-pin TSOP package. The series targets applications needing multiple switches in a confined space, providing a standardized solution for designers optimizing PCB real estate in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

NTGD4161PT1GNTGD4161PT1G

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