NTHD2102PT1G

FET, MOSFET Arrays Overview

The NTHD2102PT1G is a dual P-channel power MOSFET manufactured by onsemi, housed in the ChipFET-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of -20 V and a continuous drain current (Id) of -6.6 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 35 mΩ at Vgs = -4.5 V. Gate specifications include a threshold voltage (Vgs(th)) range of -0.6 V to -1.5 V and a total gate charge (Qg) of 7 nC at Vgs = -4.5 V. Thermal performance is defined by a power dissipation (Pd) of 1.1 W and an operating junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrates two independent transistors within a single compact footprint for space-constrained designs.
• Low on-resistance characteristic minimizes conduction losses and improves overall circuit efficiency during operation.
• ChipFET packaging provides robust thermal management capabilities suitable for high-density surface-mount applications.

FET, MOSFET Arrays Applications

• Power distribution networks requiring efficient switching control
• Load switch circuits for managing power delivery to subsystems
• Battery protection modules utilizing dual-channel isolation

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified supply chain partners. Request official datasheets and RoHS compliance documentation prior to procurement. Confirm that the ordering suffix matches the required tape-and-reel quantity specifications. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package degradation before soldering.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution with -20 V rating and approximately -6.6 A current capacity is required. Compare Rds(on) values against system loss budgets to ensure thermal limits are not exceeded. Verify that the ChipFET-8 package dimensions align with the target PCB layout constraints. Check gate charge requirements against driver capability to ensure adequate switching speeds.

FET, MOSFET Arrays Part Context

This part belongs to the NTHD series of dual P-channel MOSFETs from onsemi. It shares the ChipFET-8 form factor with variants like NTHD4102PT1G but differs in electrical ratings. The series is designed for low-voltage, high-current switching applications where board space is limited. It complements single-channel options by providing integrated dual functionality.

FET, MOSFET Arrays Replacement Considerations

NTHD4102PT1G offers similar dual P-channel architecture but with different current and resistance ratings. NTHS4101P is a single-channel alternative with higher current capacity. Verify pinout compatibility and electrical parameters before substituting any other dual P-channel MOSFETs in existing designs.