NTHD3100CT3G

FET, MOSFET Arrays Overview

The NTHD3100CT3G is a complementary MOSFET array from onsemi, integrating one N-Channel and one P-Channel enhancement-mode device in a ChipFET package. It features a drain-to-source voltage of 20 V with continuous drain currents of +3.9 A for the N-Channel and -4.4 A for the P-Channel under pulsed conditions. The component offers low on-resistance, typically 58 mΩ for the N-Channel and 64 mΩ for the P-Channel at VGS = ±4.5 V. Total gate charge is specified at 2.3 nC for the N-Channel and 7.4 nC for the P-Channel. Operating junction temperature ranges from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Complementary N-Channel and P-Channel configuration within a single leadless SMD package
• Trench P-Channel technology designed for low on-resistance performance
• Low gate charge N-Channel optimized for test switching applications
• Compact footprint providing thermal characteristics superior to TSOP-6 packages

FET, MOSFET Arrays Applications

• DC-DC conversion circuits
• Load switch applications requiring level shift
• Drive small brushless DC motors
• Power management applications in portable, battery-powered products

FET, MOSFET Arrays Procurement Notes

Verify current availability status as the datasheet indicates discontinuation for related ordering suffixes like CT1G and CT3. Confirm specific package marking and shipping details directly with onsemi representatives or authorized distributors. Ensure compliance with RoHS requirements if applicable to the specific manufacturing lot.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a compact complementary pair with high current handling capabilities. The low gate charge of the N-Channel makes it suitable for high-frequency switching, while the trench P-Channel ensures efficient conduction. Verify that the 20 V rating aligns with system voltage requirements and that the thermal resistance allows for adequate heat dissipation on the target PCB layout.

FET, MOSFET Arrays Part Context

This part belongs to the NTHD3100C series of power MOSFET arrays. It utilizes the ChipFET (CASE 1206A) package, which is noted for being approximately 40% smaller than traditional TSOP-6 packages. The series is designed to provide integrated solutions for space-constrained power management applications.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes within the NTHD3100C family, such as NTHD3100CT1G or NTHD3100CT1, noting potential differences in packaging quantities or lead-free status. Evaluate alternative complementary MOSFET arrays from other manufacturers if the NTHD3100CT3G is discontinued.