NTHD4102PT1G

FET, MOSFET Arrays Overview

The NTHD4102PT1G is a dual P-channel enhancement mode MOSFET manufactured by onsemi. It features a ChipFET-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage (Vds) of 20 V and provides a continuous drain current (Id) of 4.1 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 120 mΩ, a gate charge (Qg) of 8.6 nC, and a threshold voltage (Vgs(th)) of 1.5 V. The component operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 600 mW.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration for space-efficient circuit design
• Low on-resistance for improved power efficiency
• High thermal stability suitable for demanding environments

FET, MOSFET Arrays Applications

• Power management circuits requiring dual P-channel switching
• Battery protection systems
• Load switch applications in portable electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to ensure compatibility with design requirements. Confirm RoHS compliance status through official datasheets. Check for any recent product change notices or material declarations that may affect integration. Ensure the source provides authentic onsemi components to avoid counterfeit risks.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel MOSFET with 20 V rating and 4.1 A current capacity is required. Consider the ChipFET-8 package for surface-mount assembly constraints. Evaluate the 120 mΩ on-resistance against thermal management needs. Compare gate charge specifications for switching speed requirements in the target application.

FET, MOSFET Arrays Part Context

This part belongs to the NTHD4102P series of dual P-channel MOSFETs from onsemi. It is designed for general-purpose switching applications where compact size and high performance are critical. The ChipFET-8 package offers a small footprint compared to traditional discrete solutions.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other dual P-channel MOSFETs with similar voltage and current ratings. Verify pinout compatibility and package dimensions before substitution. Check if alternative parts meet the same Rds(on) and Qg specifications for equivalent performance.