NTHD4502NT1

FET, MOSFET Arrays Overview

The NTHD4502NT1 is a dual N-channel Power MOSFET array from onsemi, housed in an 8-SMD ChipFET package. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.2A at 25°C. The device has a maximum power dissipation of 640mW and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 3V max at 250µA, a gate charge (Qg) of 7nC max at 10V, and an input capacitance (Ciss) of 140pF max at 15V. The on-resistance (Rds(on)) is 85mΩ max at 2.9A with 10V gate drive.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single leadless ChipFET package for space-efficient designs.
• Logic-level gate operation allows direct driving from standard logic interfaces.
• Optimized thermal performance suitable for applications requiring efficient heat transfer.

FET, MOSFET Arrays Applications

• DC-DC Buck/Boost Converters
• Battery and Low Side Switching in Portable Equipment
• Level Shifting

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or certified secondary market suppliers like Rochester Electronics. Confirm the specific ordering suffix matches the required tape-and-reel packaging format. Check for RoHS compliance status as indicated in official datasheets, noting that some listings may indicate non-compliance depending on manufacturing date and region.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Ensure the 30V drain-source voltage rating exceeds the circuit's maximum operating voltage. Verify that the 2.2A continuous current capability meets load requirements and that the 85mΩ on-resistance aligns with thermal management constraints for the intended enclosure.

FET, MOSFET Arrays Part Context

This part belongs to onsemi’s ChipFET family, which integrates multiple transistors into small surface-mount packages. The NTHD4502 series specifically offers dual N-channel configurations designed to reduce board space compared to discrete components. It serves as a complementary option to other ChipFET devices like the NTHD4508N for various power management tasks.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official onsemi resources for cross-reference data or evaluate similar dual N-channel ChipFET devices with matching voltage and current ratings.