FET, MOSFET Arrays NTHD4502NT1G product image

NTHD4502NT1G

$1.05
  • Description:MOSFET 2N-CH 30V 2.2A CHIPFET
  • Series:-

SKU:0b3f7a360d10 Category: Brand:

  
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NTHD4502NT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 2.2A CHIPFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTHD4502NT1G

  • Description:MOSFET 2N-CH 30V 2.2A CHIPFET
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.2A
  • Rds On (Max) @ Id, Vgs:85mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:140pF @ 15V
  • Power - Max:640mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:ChipFET™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTHD4502NT1G

NTHD4502NT1G

FET, MOSFET Arrays Overview

The NTHD4502NT1G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a ChipFET package with an 8-SMD, flat lead configuration. The device supports a drain-source voltage of 30 V and delivers a continuous drain current of 2.2 A at 25°C. Key electrical parameters include a maximum on-resistance of 85 mΩ at 10 V gate drive and a typical gate charge of 7 nC. The component operates within a temperature range of -55°C to +150°C junction temperature, with a maximum power dissipation of 640 mW.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel architecture integrated into a single compact ChipFET package for space-constrained designs.
  • Logic-level gate threshold capability enabling direct interface with standard digital logic outputs.
  • Leadless surface-mount construction providing improved thermal performance compared to traditional TSOP-6 packages.

FET, MOSFET Arrays Applications

  • DC-DC buck and boost converter circuits
  • Low-side switching in portable electronic devices such as cell phones and MP3 players
  • Digital-to-analog level shifting applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape-and-reel specifications. Ensure that the requested part number matches the exact RoHS compliance status and automotive qualification requirements defined in the datasheet. Cross-reference the manufacturer code with authorized distribution channels to validate authenticity and traceability before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint application. The low on-resistance and fast switching characteristics make it suitable for high-frequency power management tasks. Verify that the 30 V breakdown voltage aligns with the system's supply rails and that the 640 mW power dissipation rating accommodates the expected thermal load under worst-case operating conditions.

FET, MOSFET Arrays Part Context

This component belongs to the ChipFET family from onsemi, designed specifically for portable electronics where board space is limited. The series integrates multiple transistors into a single leadless package to reduce assembly complexity and improve thermal transfer efficiency relative to conventional plastic packages.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 30 V rating, dual N-channel configuration, and 8-SMD flat lead package. Verify pinout compatibility and ensure equivalent or superior Rds(on) and thermal resistance values are maintained to prevent circuit performance degradation.

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$1.05
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