NTHD5904T1

FET, MOSFET Arrays Overview

The NTHD5904T1 is a dual N-channel Power MOSFET from onsemi, housed in an 8-pin ChipFET package. It features a drain-source voltage rating of 20 V and a continuous drain current of 3.1 A at 25°C. The device offers a typical on-state resistance of 65 mΩ at VGS = 4.5 V and 115 mΩ at VGS = 2.5 V. Key electrical parameters include a gate threshold voltage of 0.6 V, total gate charge of 4.0 nC, and forward transconductance of 8.0 S. Operating junction temperature ranges from -55°C to +150°C with maximum power dissipation of 2.1 W.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs within a single compact surface-mount package for space-constrained designs.
• Logic Level Gate Drive: Optimized gate threshold voltage allows efficient switching control using standard logic-level signals.
• Low On-State Resistance: Designed to minimize conduction losses and improve overall circuit efficiency during operation.

FET, MOSFET Arrays Applications

• Power management circuits in portable electronic devices
• Battery-powered products such as cellular and cordless telephones
• PCMCIA card interface applications

FET, MOSFET Arrays Procurement Notes

Verify the specific revision status and availability through authorized distributors, as component lifecycles may change. Confirm that the ChipFET package dimensions align with your PCB footprint requirements before finalizing orders. Ensure compliance with RoHS directives if required by your manufacturing standards.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a miniature form factor. The 20V rating suits low-voltage DC-DC converters and load switches. Verify that the 3.1A continuous current capability meets the thermal constraints of the target application environment.

FET, MOSFET Arrays Part Context

This part belongs to the NTH series of Power MOSFETs manufactured by onsemi. It utilizes the ChipFET packaging technology, which is designed to save board space compared to traditional packages. The device is intended for general-purpose switching applications in consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current ratings. Ensure any substitute maintains the same 8-pin ChipFET outline and electrical characteristics such as RDS(on) and Qg to guarantee circuit performance compatibility.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the NTHD5904T1?

The maximum continuous drain current is 3.1 A at an ambient temperature of 25°C and 2.2 A at 85°C.

Does the NTHD5904T1 have an integrated body diode?

Yes, each channel includes an intrinsic body diode with a forward voltage of typically 0.8 V at 0.9 A source current.

What is the operating temperature range of this MOSFET?

The operating junction and storage temperature range is from -55°C to +150°C.