NTHL023N065M3S

Single FETs, MOSFETs Overview

The NTHL023N065M3S is an EliteSiC silicon carbide MOSFET in a TO-247-3L package. It features a 650 V drain-source voltage and a typical on-resistance of 23 mΩ at VGS = 18 V. The device supports a continuous drain current of 70 A at 25°C case temperature, with a maximum rating of 218 A pulsed. Key electrical parameters include a total gate charge of 69 nC, output capacitance of 153 pF, and a junction-to-case thermal resistance of 0.57 °C/W. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate charge for reduced switching energy
• High-speed switching capability with low output capacitance
• 100% avalanche tested for enhanced reliability
• Halide-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

• Switching mode power supplies (SMPS)
• Solar inverters
• Uninterruptible power supplies (UPS)
• Energy storage systems
• Electric vehicle charging infrastructure

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure compatibility with TO-247-3L mounting requirements. Confirm that application conditions remain within the specified maximum ratings for voltage, current, and thermal limits to maintain device reliability and performance integrity.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion applications requiring low conduction losses and fast switching speeds. The low thermal resistance facilitates effective heat dissipation in compact designs. Evaluate system requirements against the 650 V breakdown voltage and 70 A continuous current capabilities to ensure adequate headroom for operational stresses.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's EliteSiC M3S series of silicon carbide MOSFETs. The series is designed for high-voltage, high-frequency power electronics. The NTHL023N065M3S specifically utilizes the TO-247-3L through-hole package, offering robust mechanical stability and thermal performance compared to surface-mount alternatives in the same family.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-referencing requires matching voltage ratings, on-resistance values, and package dimensions. Verify that any substitute maintains comparable switching characteristics and thermal resistance to ensure system performance consistency.