NTJD1155LT1

FET, MOSFET Arrays Overview

The NTJD1155LT1 is a dual MOSFET device integrating a P-Channel load switch and an N-Channel level-shifter in an SC-88 package. Designed for portable electronics, it supports input voltages from 1.8 V to 8.0 V and drives loads up to 1.3 A. The P-Channel MOSFET features extremely low on-resistance, ranging from 130 mΩ at 4.5 V VIN to 260 mΩ at 1.8 V VIN. The N-Channel level-shifter accepts logic signals as low as 1.5 V and includes internal ESD protection. This configuration enables efficient high-side switching with minimal control signal requirements.

FET, MOSFET Arrays Feature Summary

• Integrates a P-Channel trench MOSFET load switch with an N-Channel level-shifter in a single compact package
• Enables direct drive from low-voltage logic signals (down to 1.5 V) via the integrated level-shift circuit
• Features extremely low RDS(on) for the P-Channel device to minimize power loss during conduction
• Includes internal ESD protection on the N-Channel gate for enhanced reliability

FET, MOSFET Arrays Applications

• High-side load switching in portable electronic equipment
• Power management circuits requiring low battery voltage operation
• Systems interfacing low-voltage logic controllers with higher voltage loads

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists NTJD1155LT1G and NTJD1155LT2G as available variants. Confirm whether the required quantity corresponds to the tape and reel specification of 3000 units per reel associated with these part numbers. Ensure the selected variant matches the packaging and marking requirements for the intended assembly process.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution is needed for high-side switching with low-voltage logic compatibility. It is suitable for applications where supply lines range between 1.8 V and 8.0 V and load currents do not exceed 1.3 A continuous. Consider the thermal resistance of 320 °C/W junction-to-ambient when designing for steady-state operation without significant PCB copper area assistance.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's portfolio of integrated power switches designed for space-constrained portable devices. It combines discrete MOSFET functions into a single SC-88 (SOT-363) footprint, reducing board space compared to using separate components. The integration simplifies design by handling the level-shifting requirement internally, provided an external pull-up resistor is connected.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not identified in the provided documentation. Verify pinout compatibility and electrical specifications if considering alternative manufacturers' dual MOSFETs or dedicated load switch ICs.