NTJD2152PT1G

FET, MOSFET Arrays Overview

The NTJD2152PT1G is a dual P-channel enhancement mode MOSFET manufactured by onsemi. It features an isolated channel configuration within a compact SOT-363 (US) surface-mount package containing six pins. The device supports a maximum drain-source voltage of 20 V and a continuous drain current of 880 mA. Key electrical parameters include a typical gate charge of 2.2 nC at the specified gate-source voltage and a maximum drain-source resistance of 1 Ω. The component operates reliably across a temperature range from -55°C to +150°C, with a power dissipation rating of 350 mW.

FET, MOSFET Arrays Feature Summary

• Dual P-channel isolation architecture for independent signal control
• Compact SOT-363 surface-mount footprint for space-constrained designs
• Enhanced mode operation optimized for low-voltage switching applications

FET, MOSFET Arrays Applications

• Low-side load switching in portable consumer electronics
• Signal level translation between different voltage domains
• Power management circuits in battery-operated devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity aligns with standard manufacturing lot sizes. Cross-reference the part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. Ensure the design accounts for the 20 V voltage limit and 880 mA current capability. Verify thermal management requirements given the 350 mW power dissipation constraint in the small outline package. Check compatibility with the target gate drive voltage levels for optimal switching performance.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's portfolio of dual MOSFETs designed for efficient power management in compact electronic systems. The NTJD series utilizes advanced silicon technology to provide high-density integration. The specific model integrates two isolated channels to reduce board space compared to discrete single-transistor implementations.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for verified alternatives. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility without circuit redesign.