FET, MOSFET Arrays NTJD3158CT2G product image

NTJD3158CT2G

$0.10
  • Description:MOSFET N/P-CH 20V 0.63A SC88
  • Series:-

SKU:7c8f041f4db1 Category: Brand:

  
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NTJD3158CT2G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 0.63A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD3158CT2G

  • Description:MOSFET N/P-CH 20V 0.63A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:630mA, 820mA
  • Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
  • Power - Max:270mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTJD3158CT2G

NTJD3158CT2G

FET, MOSFET Arrays Overview

The NTJD3158CT2G is a dual N-channel and P-channel MOSFET manufactured by onsemi. It integrates two independent transistors within a single surface-mount package to facilitate efficient power switching in compact designs. The device features low on-resistance for both channels, ensuring minimal conduction losses during operation. Designed for high-speed switching applications, it offers fast transition times suitable for modern digital logic interfaces. The component is constructed using silicon technology and complies with halogen-free and RoHS standards, supporting environmentally conscious manufacturing processes.

FET, MOSFET Arrays Feature Summary

  • Dual configuration combining one N-channel and one P-channel MOSFET in a single package
  • Low on-resistance characteristics for both channels to minimize power loss
  • Fast switching speeds optimized for high-frequency signal processing
  • RoHS compliant and halogen-free construction

FET, MOSFET Arrays Applications

  • DC-DC converter circuits requiring complementary switching pairs
  • Load switch implementations for portable electronic devices
  • Power management units in mobile communication equipment

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer marking and date code on the component body against official onsemi documentation. Confirm the package type matches the required PCB footprint specifications. Ensure the ordering suffix corresponds to the desired tape and reel quantity. Check for any specific handling instructions related to electrostatic discharge sensitivity during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require integrating both N-channel and P-channel switching functions into a single footprint. Evaluate the total current requirements of the application against the combined ratings of the internal transistors. Consider the thermal performance of the package relative to the expected power dissipation in the target circuit environment.

FET, MOSFET Arrays Part Context

This part belongs to the family of dual MOSFETs designed for integrated power solutions. It serves as a compact alternative to discrete transistor arrangements, reducing board space and assembly complexity. The integration supports streamlined design workflows for consumer electronics and industrial control systems requiring reliable dual-channel switching capabilities.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and electrical parameters. Verify that alternative components meet the same regulatory compliance standards.

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