NTJD4001NT1G

FET, MOSFET Arrays Overview

The NTJD4001NT1G is a dual N-channel small signal MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 250 mA. The device has a maximum drain-source resistance (Rds(on)) of 2.5 Ω and a typical gate charge (Qg) of 0.9 nC at the specified gate-source voltage. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation (Pd) of 2.72 W. The component is housed in an SC-88 surface-mount package with six pins, measuring 2.2 mm in length and 1 mm in height.

FET, MOSFET Arrays Feature Summary

• Low gate charge design enables fast switching performance for efficient power management.
• SC-88 package provides a small footprint, occupying 30% less area than TSOP-6 alternatives.
• Integrated ESD protection safeguards the gate terminal against electrostatic discharge events.

FET, MOSFET Arrays Applications

• Low side load switching
• Li-ion battery supplied devices such as cell phones and PDAs
• Buck converters
• Level shifting circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer part number NTJD4001NT1G against official onsemi documentation to ensure authenticity. Confirm that the SC-88 package dimensions and pin configuration match the required PCB layout specifications. Check for AEC-Q101 automotive qualification status if the application demands high reliability standards. Ensure the ordering suffix aligns with the desired packaging format before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel MOSFET is required for low-voltage applications. The 30 V rating and 250 mA current capacity suit portable electronics and battery-powered systems. Consider the low gate charge for high-frequency switching requirements. Verify thermal management capabilities given the 2.72 W power dissipation limit in the small SC-88 package.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's small signal MOSFET portfolio, designed for space-constrained consumer electronics. It integrates two isolated N-channel enhancement mode transistors into a single surface-mount package. The SC-88 form factor supports automated assembly processes while minimizing board space usage compared to larger transistor packages.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official cross-reference guides or contact onsemi technical support for verified alternative components with matching electrical characteristics and package dimensions.