NTJD4105CT1G

FET, MOSFET Arrays Overview

The NTJD4105CT1G is a complementary dual MOSFET array manufactured by onsemi, integrating N-channel and P-channel enhancement-mode field-effect transistors within a single surface-mount package. The device features a drain-source voltage rating of 20V for the N-channel and -8V for the P-channel configuration. Continuous drain current capabilities are specified at 630mA for the N-channel and -775mA for the P-channel variants. The unit utilizes a compact SC-88 (SOT-363) six-pin housing designed for space-constrained printed circuit board applications.

FET, MOSFET Arrays Feature Summary

• Integrates both N-channel and P-channel enhancement-mode MOSFETs into a single monolithic component to reduce footprint.
• Utilizes a low-profile SC-88 surface-mount package suitable for high-density assembly processes.
• Designed with logic-level gate drive characteristics compatible with standard digital control interfaces.

FET, MOSFET Arrays Applications

• Battery protection circuits in portable electronic devices
• Load switching applications in mobile communication equipment
• Power management modules for consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix designation when sourcing replacements, as manufacturing changes may affect pinout or electrical tolerances. Confirm AEC-Q101 automotive qualification status if the design requires compliance with automotive reliability standards. Ensure the supplier provides valid RoHS certification documentation to meet environmental regulatory requirements for the target market.

FET, MOSFET Arrays Selection Notes

Select this component when a matched pair of N-channel and P-channel switches is required in a minimal footprint. Compare the on-resistance values against the specific load current requirements to ensure thermal performance remains within safe operating limits. Verify that the gate threshold voltages align with the available logic supply rails in the system architecture.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD4105C series of complementary MOSFET arrays from onsemi. It serves as a discrete solution for power switching tasks where board space is limited. The series is engineered for general-purpose switching in portable devices, offering a balance between current handling capability and physical size constraints typical of modern consumer electronics designs.

FET, MOSFET Arrays Replacement Considerations

• NTJD4105CT2G

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is specified as +150°C.

Does this component support automotive applications?

Yes, the device is qualified to the AEC-Q101 standard for automotive grade reliability.

What is the package type used for this dual MOSFET?

The component is housed in a 6-TSSOP, SC-88, or SOT-363 surface-mount package.