NTJD4152PT1G

FET, MOSFET Arrays Overview

The NTJD4152PT1G is a dual P-channel enhancement-mode MOSFET manufactured by onsemi. It features an isolated transistor configuration within a surface-mount US package containing six pins. The device supports a maximum drain-source voltage of 20 V and a continuous drain current of 880 mA. Key electrical parameters include a maximum drain-source resistance of 1 Ω, a typical gate charge of 2.2 nC at the specified gate-source voltage, and a forward voltage of -0.8 V. The component operates within a temperature range from -55°C to 150°C with a maximum power dissipation of 350 mW.

FET, MOSFET Arrays Feature Summary

• Dual P-channel isolation architecture for compact circuit integration
• Enhancement mode operation with low threshold voltage characteristics
• ESD protection capabilities integrated into the semiconductor structure

FET, MOSFET Arrays Applications

• Battery management systems requiring isolated switching
• Portable electronic devices utilizing low-voltage power rails
• General-purpose signal switching in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Ensure that the requested variant matches the required automotive qualification standards if applicable to the design. Cross-reference the component marking with the datasheet to prevent counterfeit substitution during sourcing.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required within a minimal footprint. The 20 V rating suits low-voltage applications, while the 880 mA current capacity supports moderate load requirements. Consider the SOT-363 equivalent package dimensions for PCB layout constraints and thermal management needs relative to the 350 mW dissipation limit.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of small-signal MOSFETs designed for portable electronics. It serves as a complementary device to N-channel counterparts in the same series, offering matched performance characteristics for differential or high-side switching applications. The family emphasizes space efficiency and reliability for mobile and handheld form factors.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in gate charge or on-resistance values. Verify pin compatibility and thermal performance before implementation.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±12 V.

Is this component qualified for automotive applications?

Yes, the device meets the AEC-Q101 automotive standard requirements.

What is the physical package type?

The component is housed in a 6-pin US surface-mount package, commonly identified as SOT-363.