NTJD4158CT1G

FET, MOSFET Arrays Overview

The NTJD4158CT1G is a complementary small-signal MOSFET array manufactured by onsemi, housed in an SC-88 (SOT-363) surface-mount package. It integrates one N-channel and one P-channel enhancement-mode transistor within a single isolated die structure. The N-channel device supports a drain-source voltage of 30 V with a continuous drain current of 250 mA at 25°C. The P-channel counterpart offers a 20 V breakdown voltage and handles up to 880 mA. Key electrical characteristics include a maximum gate threshold voltage of 1.5 V at 100 µA, a typical gate charge of 0.9 nC, and a maximum power dissipation of 270 mW. The input capacitance is rated at 33 pF.

FET, MOSFET Arrays Feature Summary

• Complementary N/P-channel configuration for efficient signal switching and level translation
• Logic-level gate drive capability allowing direct interface with standard logic outputs
• ESD protection integrated into the isolated die structure for enhanced reliability

FET, MOSFET Arrays Applications

• Portable equipment battery management systems
• Signal level shifting between different voltage domains
• Small-signal switching in mobile communication devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material declaration requirements prior to finalizing procurement orders. Check for any recent product change notices that may affect assembly or sourcing parameters.

FET, MOSFET Arrays Selection Notes

Select this component when a compact complementary switch is required for low-voltage applications. Ensure the design accounts for the distinct voltage ratings of the N-channel (30 V) and P-channel (20 V) elements. Verify that the load current remains within the 250 mA and 880 mA limits respectively to maintain safe operating area conditions.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD4158 family of complementary MOSFET arrays designed for space-constrained portable electronics. It serves as a compact alternative to discrete dual-transistor solutions, reducing board footprint while providing matched switching characteristics for push-pull or level-shifting circuits.

FET, MOSFET Arrays Replacement Considerations

The NTJD4152PT1G is a related P-channel variant within the same series but lacks the complementary N-channel integration. Direct substitution requires verifying if the application utilizes both channels simultaneously.