FET, MOSFET Arrays NTJD4158CT2G product image

NTJD4158CT2G

  • Description:MOSFET N/P-CH 30V/20V 0.25A SC88
  • Series:-

SKU:ce553b7276f0 Category: Brand:

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NTJD4158CT2G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 30V/20V 0.25A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD4158CT2G

  • Description:MOSFET N/P-CH 30V/20V 0.25A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V, 20V
  • Current - Continuous Drain (Id) @ 25°C:250mA, 880mA
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:33pF @ 5V
  • Power - Max:270mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTJD4158CT2G

NTJD4158CT2G

FET, MOSFET Arrays Overview

The NTJD4158CT2G is a complementary MOSFET array manufactured by onsemi, integrating one N-channel and one P-channel enhancement-mode transistor within a single SC-88 (SOT-363) surface-mount package. The device features a maximum drain-source voltage of 30V for the N-channel and 20V for the P-channel. Continuous drain current ratings are specified at 880mA for the N-channel and 250mA for the P-channel at 25°C. Key electrical parameters include a maximum on-resistance of 1.5Ω for the N-channel and 500mΩ for the P-channel. The component operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 270mW.

FET, MOSFET Arrays Feature Summary

  • Dual-channel complementary configuration combining N-channel and P-channel transistors in a compact footprint
  • Logic-level gate drive capability suitable for low-voltage digital control applications
  • Enhancement-mode operation providing high switching efficiency in space-constrained designs

FET, MOSFET Arrays Applications

  • DC-DC converter circuits requiring complementary switching elements
  • Low-power battery management systems
  • Signal switching and level translation in portable electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Ensure that the procurement channel provides valid traceability and authenticity guarantees. Cross-reference the part number with the latest datasheet revision to confirm compliance with current RoHS standards and material declarations before finalizing purchase orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual complementary MOSFET solution is required in an SC-88 package. Evaluate the 1.5Ω N-channel and 500mΩ P-channel on-resistance against load requirements. Confirm that the 30V/20V voltage ratings align with the system's supply rails. Consider the 270mW power dissipation limit and thermal constraints during PCB layout planning.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD4158C series of complementary MOSFET arrays from onsemi. It serves as a discrete alternative to integrated driver ICs in simple switching topologies. The SC-88 package allows for automated assembly in high-volume consumer electronics manufacturing processes.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible substitutes may include other SC-88 complementary MOSFETs from different manufacturers, provided voltage and current ratings meet or exceed the original specifications. Verify on-resistance and gate charge values to ensure equivalent switching performance.

NTJD4158CT2GNTJD4158CT2G

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