FET, MOSFET Arrays NTJD4401NT1 product image

NTJD4401NT1

  • Description:MOSFET 2N-CH 20V 0.63A SC88
  • Series:-

SKU:ad1460e482ce Category: Brand:

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NTJD4401NT1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 0.63A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD4401NT1

  • Description:MOSFET 2N-CH 20V 0.63A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:630mA
  • Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
  • Power - Max:270mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTJD4401NT1

NTJD4401NT1

FET, MOSFET Arrays Overview

The NTJD4401NT1 is a small signal MOSFET array manufactured by onsemi, featuring two N-channel enhancement-mode transistors in a single SC-88 surface-mount package. It operates with a maximum drain-source voltage of 20 V and supports a continuous drain current of 250 mA. The device includes integrated ESD protection and exhibits a typical gate charge of 0.9 nC at specified voltages. Designed for low-power applications, it offers a maximum power dissipation of 2.72 W and functions within a temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration in a compact SC-88 footprint
  • Integrated electrostatic discharge (ESD) protection
  • Low gate charge for efficient switching performance

FET, MOSFET Arrays Applications

  • Portable battery-powered equipment
  • Signal switching circuits
  • Low-voltage logic level interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with existing PCB footprints and thermal management requirements before integration into production designs.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation in minimal space. Compare total gate charge and on-resistance values against alternative SC-88 devices to ensure optimal efficiency for the target switching frequency and load conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's small signal MOSFET array family, specifically designed for high-density surface-mount applications. It complements other dual-channel solutions like the NTJD5121NT1G, offering a balance of voltage rating and current capacity for consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include the NTJD4401NT1G, which shares identical electrical characteristics and pinout. Verify package dimensions and ESD protection levels when considering cross-brand alternatives from manufacturers such as Nexperia or Toshiba.

NTJD4401NT1NTJD4401NT1

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