NTJD4401NT1G

FET, MOSFET Arrays Overview

The NTJD4401NT1G is a dual N-channel enhancement-mode MOSFET array manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 630 mA. The device utilizes an SC-88 surface-mount package with six pins, measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height. Key electrical parameters include a maximum drain-source resistance of 445 mΩ and a typical gate charge of 1.3 nC at 4.5 V. It operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for compact circuit integration
• Enhancement mode operation suitable for logic-level switching
• Surface-mount design optimized for space-constrained PCB layouts

FET, MOSFET Arrays Applications

• Power management circuits
• Signal amplification stages
• Switching applications in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure component authenticity. Confirm that the received parts match the specified SC-88 package dimensions and pin configurations. Check for any recent product change notices or end-of-life announcements from the manufacturer before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required for low-voltage, moderate-current applications. Ensure the design accommodates the 445 mΩ maximum on-resistance and the 630 mA current limit. Verify that the operating environment stays within the specified -55°C to +150°C junction temperature range for reliable performance.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD series of dual MOSFET arrays from onsemi. It shares the SC-88 footprint family with other small-signal transistors but is distinct due to its dual N-channel architecture. It serves as a compact alternative to discrete single MOSFETs in designs requiring multiple switching elements.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official onsemi documentation for qualified alternatives.