NTJD4401NT4G

$0.14

Description：MOSFET 2N-CH 20V 0.63A SC88
Series：-

SKU:18e971176152 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NTJD4401NT4G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 0.63A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD4401NT4G

Description：MOSFET 2N-CH 20V 0.63A SC88
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：630mA
Rds On (Max) @ Id, Vgs：375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：46pF @ 20V
Power - Max：270mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-88/SC70-6/SOT-363
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NTJD4401NT4G

NTJD4401NT4G

FET, MOSFET Arrays Overview

The NTJD4401NT4G is a dual N-channel enhancement mode MOSFET array manufactured by onsemi. It features an isolated configuration within a surface-mount SC-88 package with six pins. The device supports a maximum drain-source voltage of 20 V and a continuous drain current of 630 mA per channel. Key electrical characteristics include a maximum on-resistance of 445 mΩ and a typical gate charge of 1.3 nC at 4.5 V. The component operates within a temperature range of -55°C to +150°C, with a maximum power dissipation of 550 mW.

FET, MOSFET Arrays Feature Summary

Dual N-channel architecture providing two independent switching paths in a compact footprint
Isolated configuration design for flexible circuit integration
Integrated electrostatic discharge protection mechanisms

FET, MOSFET Arrays Applications

Portable electronic devices requiring space-efficient switching solutions
Battery-powered equipment utilizing low-voltage DC-DC conversion
General-purpose signal routing and load management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and automotive qualification requirements prior to procurement. Ensure the selected variant matches the required tape-and-reel quantity for production line compatibility.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in an SC-88 package. Evaluate the 445 mΩ on-resistance against thermal constraints for the intended load current. Consider the 20 V voltage rating relative to system supply levels to ensure adequate safety margins during operation.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's small-signal MOSFET portfolio designed for portable applications. It serves as a dual-channel alternative to single-transistor arrays, offering integrated ESD protection. The SC-88 package allows for high-density PCB layouts compared to larger transistor packages.