NTLGD3502NT1G

Overview

The NTLGD3502NT1G is a dual N-channel power MOSFET from onsemi, rated for a maximum drain-source voltage of 20V. It features a continuous drain current of 5.8A at room temperature and 4.6A at elevated temperatures. The device utilizes a DFN6 surface-mount package with dimensions of 3x3mm. This component is designed for efficient power switching applications requiring compact form factors.

Feature Summary

• Dual N-channel configuration within a single package
• Surface-mount DFN6 packaging for space efficiency
• Rated for 20V drain-source voltage operation

Applications

• Power switching circuits
• DC-DC converter modules
• Battery management systems

Procurement Notes

Verify the specific suffix NT1G against your bill of materials to ensure correct tape-and-reel specifications. Confirm that the 3x3mm DFN6 footprint matches your PCB design constraints. Cross-reference the thermal resistance values in the official datasheet with your system's heat dissipation requirements to prevent overheating during operation.

Selection Notes

Select this part when a compact dual N-channel solution is required for low-voltage applications. The 20V rating suits logic-level interfaces. Ensure the 3x3mm package fits the available board area. Compare the 5.8A/4.6A current ratings against peak load demands to maintain safe operating margins under all thermal conditions.

Part Context

This component belongs to onsemi's power MOSFET array series, specifically optimized for high-density designs. The NTLGD3502NT1G variant integrates two independent N-channel transistors, reducing component count compared to discrete solutions. It supports modern surface-mount assembly processes.

Replacement Considerations

Consult the onsemi Product Recommendation Tool for verified substitutes. Direct replacements must match the 20V rating, dual N-channel topology, and DFN6 package dimensions to ensure mechanical and electrical compatibility.