NTLJD2105LTBG

NTLJD2105LTBG

$0.18
  • Description:MOSFET N/P-CH 8V 2.5A 6WDFN
  • Series:-

SKU:fda6c7b0618b Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 8V 2.5A 6WDFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):8V
  • Current - Continuous Drain (Id) @ 25°C:2.5A
  • Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:520mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-WDFN (2x2)
  • Grade:-
  • Qualification:-

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NTLJD2105LTBG

Overview

The onsemi NTLJD2105LTBG is a dual MOSFET array integrating one N-channel and one P-channel transistor in a compact WDFN6 package. It features an 8V drain-source voltage rating and supports continuous currents of 2.5A for the N-channel and 2.3A for the P-channel variant. The device offers low on-resistance to minimize power loss during switching operations. Designed for surface mount installation, it operates within a temperature range of -55°C to 150°C. This component is suitable for applications requiring efficient power management and signal switching in space-constrained environments.

Feature Summary

  • Integrates complementary N-channel and P-channel MOSFETs in a single package
  • Compact WDFN6 footprint designed for high-density PCB layouts
  • Low on-resistance characteristics for efficient power handling

Applications

  • Power management circuits
  • Embedded system switching
  • Signal routing interfaces

Procurement Notes

Verify the specific ordering suffix to ensure the correct package configuration and shipping quantity. Confirm that the WDFN6 package dimensions align with your board design constraints. Check for AEC-Q101 qualification if automotive reliability standards are required for your specific application environment.

Selection Notes

Select this component when both N-type and P-type switching capabilities are needed in a minimal footprint. Ensure the 8V voltage rating meets the circuit requirements. Evaluate thermal performance based on the expected current load and ambient operating conditions to maintain reliability.

Part Context

This part belongs to onsemi's lineup of discrete semiconductor devices, specifically focusing on MOSFET arrays. It complements other power management solutions by providing integrated switching functionality. The WDFN6 package allows for reduced board space compared to separate discrete components, supporting modern miniaturization trends in electronic design.

Replacement Considerations

Consult official cross-reference data for direct substitutes. Verify pin compatibility and electrical parameters before replacing.

NTLJD2105LTBGNTLJD2105LTBG
$0.18
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