NTLJD3181PZTBG

NTLJD3181PZTBG

$0.15
  • Description:MOSFET 2P-CH 20V 2.2A 6WDFN
  • Series:-

SKU:fe8fb419b2f2 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 2.2A 6WDFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.2A
  • Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:450pF @ 10V
  • Power - Max:710mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-WDFN (2x2)
  • Grade:-
  • Qualification:-

Download product information

NTLJD3181PZTBG

Overview

The NTLJD3181PZTBG is a dual P-channel MOSFET array manufactured by onsemi, housed in a compact 6-WDFN (2x2) surface-mount package with an exposed pad. Designed for logic-level gate drive applications, this component features a drain-source voltage rating of 20V and a continuous current capacity of 2.2A. Key electrical specifications include a maximum gate threshold voltage of 1V at 250µA, a typical gate charge of 7.8nC at 4.5V, and an input capacitance of 450pF at 10V. The device supports a wide operating junction temperature range from -55°C to 150°C and has a maximum power dissipation of 710mW.

Feature Summary

  • Dual P-channel configuration integrated into a single compact surface-mount package
  • Logic-level gate architecture enabling direct interface with standard digital control signals
  • Exposed thermal pad design within the WDFN housing to facilitate efficient heat dissipation

Applications

  • DC-DC converter output stages requiring synchronous rectification
  • Low-voltage load switching circuits in portable electronic devices
  • Power management modules for battery-operated equipment

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Confirm that the component status aligns with project requirements, as availability may vary. Ensure that the 6-WDFN footprint matches the intended PCB layout and thermal design constraints before finalizing procurement decisions.

Selection Notes

Select this component when a dual P-channel solution is required for low-voltage applications up to 20V. The logic-level gate threshold simplifies driver circuit design compared to standard threshold devices. Evaluate the thermal performance of the 6-WDFN package against the expected power dissipation levels to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET array category. It represents a solution for integrating multiple switching elements into space-constrained designs. The product line focuses on providing efficient power switching capabilities for modern consumer and industrial electronics.

Replacement Considerations

Consult official cross-reference data or manufacturer substitution guides to identify compatible alternatives. Verify that any substitute maintains identical pinout compatibility, voltage ratings, and thermal characteristics to ensure seamless integration without redesigning the host circuit board.

NTLJD3181PZTBGNTLJD3181PZTBG
$0.15
Buy Now