NTLLD4901NFTWG

FET, MOSFET Arrays Overview

The NTLLD4901NFTWG is a dual N-channel power MOSFET with an integrated Schottky diode, housed in a WDFN8 (3 mm x 3 mm) package. It features a co-packaged power stage design to minimize board space and parasitic inductances. The top FET (Q1) supports a continuous drain current of 8.3 A at 25°C with a maximum on-resistance of 17.4 mΩ at VGS = 10 V. The bottom FET (Q2) handles up to 9.6 A continuously with a maximum RDS(on) of 13.3 mΩ at VGS = 10 V. Both devices operate with a 30 V drain-to-source voltage rating and are optimized for high-side and low-side switching applications.

FET, MOSFET Arrays Feature Summary

• Co-packaged power stage solution designed to minimize board space and reduce parasitic inductances.
• Integrated Schottky diode on the low-side MOSFET to enhance switching performance.
• Optimized device architecture specifically engineered to reduce power losses during operation.

FET, MOSFET Arrays Applications

• DC-DC Converters
• System Voltage Rails
• Point of Load

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'T' indicates tape and reel packaging containing 3000 units per reel. Confirm RoHS compliance and Pb-free status as documented in the datasheet. Ensure the component matches the WDFN8 CASE 511BP mechanical outline dimensions before integration into the PCB layout.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact dual N-channel configuration with integrated body diodes. Evaluate thermal resistance values based on the specific FR4 pad size used, as steady-state dissipation varies significantly between minimum recommended pads and larger copper areas. Consider gate charge requirements for driving circuitry compatibility.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of co-packaged power solutions utilizing WDFN technology. It integrates two distinct N-channel MOSFETs within a single 3x3 mm footprint, offering a space-efficient alternative to discrete components for synchronous rectification or half-bridge configurations.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the WDFN8 3x3mm package, 30V rating, and dual N-channel topology. Verify pinout compatibility, particularly the shared source/drain connections, and ensure equivalent RDS(on) and thermal characteristics to maintain system performance without redesigning the PCB footprint.

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in this dual MOSFET?

Q1 is designated as the Top FET with a continuous current rating of 8.3 A and higher on-resistance, while Q2 is the Bottom FET rated for 9.6 A with lower on-resistance. Q2 also includes the integrated Schottky diode.

How does the package affect thermal performance?

Thermal resistance varies based on the PCB copper area. Using a 1 sq-in pad with 2 oz Cu yields a junction-to-ambient resistance of approximately 68.8 °C/W for Q1, whereas using the minimum recommended pad size increases this to 156.4 °C/W.

Is the integrated Schottky diode present on both transistors?

No, the datasheet specifies that only the Low Side MOSFET (Q2) has an integrated Schottky diode. Q1 relies on its intrinsic body diode.