FET, MOSFET Arrays NTLLD4951NFTWG product image

NTLLD4951NFTWG

$1.04
  • Description:MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
  • Series:-

SKU:fabff8a65aba Category: Brand:

  
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NTLLD4951NFTWG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTLLD4951NFTWG

  • Description:MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5.5A, 6.3A
  • Rds On (Max) @ Id, Vgs:17.4mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:605pF @ 15V
  • Power - Max:800mW, 810mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-WDFN (3x3)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTLLD4951NFTWG

NTLLD4951NFTWG

FET, MOSFET Arrays Overview

The NTLLD4951NFTWG is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a low gate charge and optimized internal inductance for high-speed switching applications. The device is housed in an 8-lead WDFN package, providing efficient thermal performance. Key electrical parameters include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 9.6A at room temperature. The on-resistance (Rds(on)) is specified at 14mΩ maximum when the gate-source voltage (Vgs) is 4.5V. The component supports a maximum junction temperature of 150°C and complies with RoHS standards.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within a single compact package
  • Optimized internal inductance for improved switching performance
  • Low gate charge characteristics for reduced drive power requirements

FET, MOSFET Arrays Applications

  • DC-DC converter circuits
  • Power management modules
  • Load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel quantity matches the production requirement. Confirm that the component meets the necessary environmental compliance standards for the target market. Cross-reference the manufacturer's latest datasheet to validate pinout compatibility and absolute maximum ratings before finalizing the bill of materials.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a 30V rating with moderate current handling capabilities. The 14mΩ on-resistance at 4.5V gate drive makes it suitable for logic-level control interfaces. Ensure the PCB layout accommodates the WDFN8 package dimensions and provides adequate copper area for thermal dissipation to maintain reliability under continuous load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the ON Semiconductor PowerTrench family of MOSFETs. These devices are engineered to minimize conduction losses while maintaining fast switching speeds. The dual configuration allows for half-bridge or synchronous rectifier topologies without occupying additional board space compared to single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

Check for direct replacements such as the NTLLD4901NFTWG, ensuring that the on-resistance and current ratings meet the circuit requirements. Verify pin-to-pin compatibility and package dimensions before substituting.

NTLLD4951NFTWGNTLLD4951NFTWG
$1.04
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