FET, MOSFET Arrays NTLTD7900ZR2G product image

NTLTD7900ZR2G

$0.25
  • Description:MOSFET 2N-CH 20V 6A 8DFN
  • Series:-

SKU:0efc1bf51971 Category: Brand:

  
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NTLTD7900ZR2G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 6A 8DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTLTD7900ZR2G

  • Description:MOSFET 2N-CH 20V 6A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:26mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:15pF @ 16V
  • Power - Max:1.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-VDFN Exposed Pad
  • Supplier Device Package:8-DFN (3x3), (MICRO8 LEADLESS)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTLTD7900ZR2G

NTLTD7900ZR2G

FET, MOSFET Arrays Overview

The NTLTD7900ZR2G is a logic-level, N-channel power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 9 A. The device utilizes a Micro8 leadless package for compact surface-mount applications. Key electrical parameters include a maximum on-resistance (R_DS(on)) of 15 mΩ at a gate-source voltage (V_GS) of 4.5 V, ensuring low conduction losses in switching circuits.

FET, MOSFET Arrays Feature Summary

  • Logic-level gate threshold enables direct drive from standard 3.3 V or 5 V logic controllers.
  • Micro8 leadless package provides a small footprint with enhanced thermal dissipation capabilities.
  • Low on-resistance design minimizes power loss during high-current operation.

FET, MOSFET Arrays Applications

  • DC-DC converter output stages
  • Load switch circuits
  • Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity through authorized onsemi distributors or certified suppliers. Confirm the marking code matches the NTLTD7900ZR2G identifier to avoid counterfeit risks. Ensure storage conditions comply with moisture sensitivity level requirements prior to assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a 20 V rating and 9 A current capacity are required in a minimal board area. The logic-level gate characteristic makes it suitable for low-voltage control systems where standard MOSFETs may not fully enhance. Compare R_DS(on) specifications against alternative packages if higher current handling is needed.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's Micro8 leadless MOSFET family, designed for space-constrained portable electronics. It complements other logic-level devices in the portfolio that prioritize thermal performance and switching efficiency in small form factors.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 20 V / 9 A / 15 mΩ specification and Micro8 package. Verify pinout compatibility and thermal pad configuration before substitution to ensure reliable soldering and heat transfer.

NTLTD7900ZR2GNTLTD7900ZR2G
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