NTMC1300R2

FET, MOSFET Arrays Overview

The NTMC1300R2 is a complementary dual N- and P-channel Power MOSFET in an SO-8 package. It features a 30 V drain-source voltage rating with continuous drain currents of 2.2 A (N-Channel) and 1.8 A (P-Channel). The device offers ultra-low on-resistance, typically 73 mΩ for the N-Channel and 100 mΩ for the P-Channel at VGS = 10 V. Total power dissipation is rated at 2.0 W at 25°C ambient temperature. The component operates within a junction temperature range of -65°C to +150°C and includes specified avalanche energy capabilities.

FET, MOSFET Arrays Feature Summary

• Complementary dual configuration integrating N-Channel and P-Channel transistors in a single miniature surface-mount package
• Ultra-low on-state resistance designed to improve system efficiency and extend battery life in portable applications
• Robust thermal performance with defined thermal resistance values for various board mounting conditions

FET, MOSFET Arrays Applications

• DC-DC converters
• Power management in portable and battery-powered products such as computers and cellular phones
• Low voltage motor controls in mass storage products like disk drives and tape drives

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and packaging type when sourcing. Confirm that the received components match the manufacturer's marking diagram and pin assignment specifications. Ensure compatibility with standard SO-8 footprint dimensions during PCB layout design to guarantee proper solder connection interface.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a matched N- and P-channel pair in a compact form factor. Evaluate the thermal resistance requirements based on the intended copper pad area and cooling method. Consider the gate threshold voltage characteristics to ensure compatibility with the driving logic levels used in the target application circuit.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's Power MOSFET portfolio, specifically categorized as a complementary dual device. It utilizes silicon technology and is housed in the SO-8 surface mount package. The product line targets low voltage switching applications where space constraints and efficiency are critical design parameters.

FET, MOSFET Arrays Replacement Considerations

Check for direct cross-reference part numbers from other manufacturers offering identical complementary N/P channel configurations in SO-8 packages. Verify that substitute devices meet or exceed the 30 V breakdown voltage and current handling capabilities required by the original design specifications.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-Channel?

The maximum continuous drain current for the N-Channel is 2.2 A under steady-state conditions with minimum recommended pad size.

How does the package affect thermal performance?

Thermal resistance varies significantly based on the copper area; it ranges from 178.5 °C/W with minimum pads to 62.5 °C/W with larger 1-inch square pads.

Is the device suitable for high-frequency switching?

Yes, the device features fast switching characteristics with turn-on delay times as low as 9 ns and rise times around 11 ns for the P-Channel.