SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NTMD2C02R2SG is a dual N-channel Power MOSFET manufactured by onsemi, housed in an 8-lead SOIC surface-mount package. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5.2A. The device exhibits a low on-state resistance (Rds(on)) of 35mΩ at Vgs=4.5V. Key switching parameters include a typical turn-on delay time of 10ns and a total gate charge (Qg) of 6nC. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix 'SG' against the manufacturer's latest datasheet to confirm lead-free status and tape-and-reel packaging specifications. Ensure that the selected component matches the required pinout and thermal pad design for your PCB layout. Cross-reference the ordering information with official distributor catalogs to validate availability and lot codes prior to finalizing procurement orders.
Select this component when a compact dual N-channel solution is required for low-voltage, high-current applications. The 20V rating suits logic-level interfaces, while the 5.2A current capability supports moderate power loads. Consider the SOIC-8 footprint constraints and verify that the thermal dissipation requirements align with the package's thermal resistance characteristics for your specific ambient conditions.
This part belongs to onsemi's NTM series of Power MOSFETs, designed for general-purpose switching applications. The series emphasizes low Rds(on) and fast switching speeds to improve overall system efficiency. The NTMD2C02R2SG specifically integrates two independent N-channel devices in a single package, reducing board space compared to discrete solutions.
The maximum operating junction temperature is 150°C.
Yes, the SG suffix indicates that the component is Pb-Free.