NTMD2P01R2

FET, MOSFET Arrays Overview

The NTMD2P01R2G is a dual P-channel MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 5.07 A. The device exhibits a low on-resistance (Rds(on)) of 35 mΩ at Vgs = -4.5 V. Gate-source voltage limits are ±12 V, with a threshold voltage (Vgs(th)) of 1.2 V. Total gate charge (Qg) is 12 nC. Power dissipation is rated at 2 W, operating within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrates two independent P-channel transistors in a single compact package for space-constrained designs.
• Low on-resistance minimizes conduction losses and heat generation during high-current switching operations.
• Enhancement mode operation allows direct interface with standard logic-level drivers for efficient control.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Load switch circuits for power distribution management
• Motor driver output stages requiring complementary channel pairs

FET, MOSFET Arrays Procurement Notes

Verify the component suffix 'G' indicates RoHS compliance when sourcing. Confirm the manufacturer designation as onsemi to ensure authenticity. Check datasheet revisions for any updates to thermal resistance or electrical limits before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this part for applications requiring a 20 V rating with high current capability in an 8-pin footprint. Ensure the driving circuit can supply sufficient negative gate voltage to fully enhance the P-channel devices. Verify that the PCB layout supports the required thermal dissipation for the specified power rating.

FET, MOSFET Arrays Part Context

This component belongs to the NTMD6N02/NTMD6P02 series of dual MOSFETs from onsemi. It serves as the P-channel counterpart to N-channel variants, providing matched characteristics for half-bridge or full-bridge topologies. The series is designed for general-purpose power switching in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

The NTMD6P02R2G is a compatible alternative offering identical pinout and electrical specifications. Verify package dimensions and thermal performance match the existing design constraints before substitution.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage allowed?

The absolute maximum rating for gate-source voltage is ±12 V. Exceeding this limit may damage the gate oxide layer.

Is this component suitable for automotive applications?

While onsemi offers automotive-grade versions of similar MOSFETs, specific qualification for the NTMD2P01R2G must be confirmed via the official datasheet or AEC-Q101 certification status.

How does the dual configuration benefit circuit design?

Integrating two channels reduces board space and simplifies assembly compared to using discrete single MOSFETs, while ensuring matched thermal and electrical behavior between the pair.