NTMD2P01R2G

Overview

The NTMD2P01R2G is a dual N-channel enhancement mode field-effect transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 5.7 A. Its typical on-resistance is specified at 3.2 milliohms, with a gate-source threshold voltage of 1 volt. The component operates within a temperature range from -55 to +150 degrees Celsius and has a power dissipation rating of 2 watts.

Feature Summary

• Dual configuration providing two independent N-channel MOSFETs within a single compact package for space-constrained designs.
• Low on-resistance characteristic enables efficient power switching with minimal conduction losses in high-current applications.
• Automotive qualification ensures reliability and performance consistency under the rigorous environmental conditions required for vehicle electronics.

Applications

• Automotive power distribution systems requiring robust switching capabilities
• High-side or low-side load switch circuits in vehicle control modules
• DC-DC converter output stages for efficient voltage regulation

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and automotive quality standards as defined in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel configuration is required to save board space compared to discrete single devices. Evaluate the thermal resistance characteristics of the SOIC-8 package against the expected power dissipation to ensure adequate heat management without additional heatsinking.

Part Context

This part belongs to the NTMD series of dual MOSFETs designed for automotive applications. It serves as a complementary solution to P-channel variants, allowing for mixed-polarity bridge configurations or independent control paths within the same footprint family.

Replacement Considerations

Direct replacements must match the 20V rating, 5.7A current capacity, and SOIC-8 package. Verify that alternative dual N-channel MOSFETs meet the same Rds(on) specifications and automotive qualification requirements to maintain circuit performance.