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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4A 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：60mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：400pF @ 20V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The NTMD4N03R2G is a dual N-channel Power MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of up to 6 A. The device achieves a maximum on-resistance (Rds(on)) of 32 mΩ at a gate-source voltage of 10 V. Designed for automotive reliability, it holds AEC-Q100 qualification. The component operates within a temperature range of -55 °C to +150 °C and includes built-in diodes for each channel.
Feature Summary
- Dual configuration with integrated body diodes for efficient switching applications
- Automotive-grade reliability certified under AEC-Q100 standards
- Low on-resistance design minimizes conduction losses and heat generation
- Extended thermal operating range suitable for demanding environments
Applications
- Automotive power distribution systems
- DC-DC converter circuits
- Motor control interfaces
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints and thermal management requirements before integration. Confirm RoHS compliance status through manufacturer documentation.
Selection Notes
Select this component when a dual N-channel solution with low Rds(on) is required in a compact SOIC-8 footprint. Consider the 30 V rating and 6 A current capacity relative to load demands. Verify that the gate drive voltage aligns with the specified threshold for optimal performance.
Part Context
This part belongs to the NVMD/NTMD series of dual N-channel MOSFETs from onsemi. These devices are engineered for high-efficiency power switching in space-constrained designs. The series emphasizes low on-resistance and robust automotive qualification for reliable operation.
Replacement Considerations
Cross-reference with NVMD6N03R2G for similar dual N-channel specifications. Verify pinout compatibility and electrical parameters such as Rds(on) and Vds before substitution.
