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The NTMD5838NLR2G is a single N-channel enhancement mode power MOSFET manufactured by onsemi. It features a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 5.8 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 25 mΩ when driven at 10 V. Key switching parameters include a gate charge (Qg) of 17 nC, an input capacitance (Ciss) of 785 pF, and a threshold voltage (Vgs(th)) of 3 V. Packaged in an 8-SOIC surface-mount case, it supports a junction temperature range from -55°C to 150°C with a total power dissipation of 1.5 W.
Verify component authenticity through authorized distribution channels due to the prevalence of counterfeit semiconductor devices. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any relevant automotive or industrial certifications if applicable to the target design environment.
Select this component based on its 40 V rating and 5.8 A current capability relative to system requirements. Evaluate the 25 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation within the 1.5 W power limit. Consider the 17 nC gate charge for driver selection to optimize switching speed and minimize losses.
This part belongs to the NTMS58 series of low-voltage N-channel MOSFETs designed for general-purpose power switching. It utilizes silicon technology and is housed in a compact SOIC-8 package suitable for surface-mount assembly. The series targets cost-sensitive applications requiring reliable performance in moderate current scenarios.
Publicly documented substitutes include the RSH070N05TB1 from Rohm Semiconductor. Verify pinout compatibility and electrical parameter alignment before substitution.