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The NTMD6601NR2G is a dual N-channel MOSFET array manufactured by onsemi, designed for surface-mount applications. It features an 8-SOIC package and supports a drain-source voltage of 80V with a continuous drain current of 1.1A. The device utilizes logic-level gate design to facilitate efficient switching in low-voltage control circuits.
Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape specifications. Confirm that the component meets all required electrical parameters for the target application before procurement.
Select this component when a dual N-channel solution is required in an 8-SOIC footprint. Ensure the 80V rating and 1.1A current capacity align with circuit demands. Verify logic-level compatibility with the driving signal source.
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET array category. It provides a compact alternative to discrete single-channel solutions, optimizing board space while maintaining reliable switching performance for consumer and industrial electronics.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions to guarantee functional compatibility without redesign.