NTMD6601NR2G

NTMD6601NR2G

$0.48
  • Description:MOSFET 2N-CH 80V 1.1A 8SOIC
  • Series:-

SKU:a404a35ae703 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 80V 1.1A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):80V
  • Current - Continuous Drain (Id) @ 25°C:1.1A
  • Rds On (Max) @ Id, Vgs:215mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:400pF @ 25V
  • Power - Max:600mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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NTMD6601NR2G

Overview

The NTMD6601NR2G is a dual N-channel MOSFET array manufactured by onsemi, designed for surface-mount applications. It features an 8-SOIC package and supports a drain-source voltage of 80V with a continuous drain current of 1.1A. The device utilizes logic-level gate design to facilitate efficient switching in low-voltage control circuits.

Feature Summary

  • Dual N-channel configuration within a compact 8-SOIC package
  • Logic-level gate design for improved drive efficiency
  • Suitable for surface-mount technology integration

Applications

  • Low-voltage power management circuits
  • Signal switching applications
  • General-purpose electronic devices requiring dual channel isolation

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape specifications. Confirm that the component meets all required electrical parameters for the target application before procurement.

Selection Notes

Select this component when a dual N-channel solution is required in an 8-SOIC footprint. Ensure the 80V rating and 1.1A current capacity align with circuit demands. Verify logic-level compatibility with the driving signal source.

Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET array category. It provides a compact alternative to discrete single-channel solutions, optimizing board space while maintaining reliable switching performance for consumer and industrial electronics.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions to guarantee functional compatibility without redesign.

NTMD6601NR2GNTMD6601NR2G
$0.48
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