NTMD6N02R2

Overview

The NTMD6N02R2G is a dual N-channel power MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 5.07 A. The device exhibits a maximum on-resistance (Rds(on)) of 35 mΩ at standard test conditions. Gate-source voltage limits are specified between -12 V and +12 V, with a threshold voltage (Vgs(th)) of 1.2 V. Total gate charge (Qg) is 12 nC. Power dissipation (Pd) reaches 2 W, and the operating temperature range spans from -55 °C to +150 °C.

Feature Summary

• Dual configuration integrates two independent N-channel enhancement-mode transistors within a single compact SOIC-8 footprint for space-constrained designs.
• Low on-resistance characteristic minimizes conduction losses and thermal generation during high-current switching operations.
• Robust thermal performance supports operation up to 150 °C junction temperature, ensuring reliability in demanding environments.

Applications

• DC-DC converter synchronous rectification stages
• Load switching and power management circuits
• Motor control driver interfaces

Procurement Notes

Verify the complete part number includes the 'G' suffix, indicating lead-free compliance and RoHS adherence. Confirm the SOIC-8 package variant matches design constraints. Review the official datasheet for specific thermal resistance values and electrical test conditions to ensure compatibility with system requirements before finalizing procurement specifications.

Selection Notes

Select this component when a dual N-channel topology is required within an 8-pin surface-mount package. Ensure the 20 V drain-source voltage rating exceeds the maximum circuit supply voltage. Verify that the 35 mΩ on-resistance meets efficiency targets for the intended load current. Consider the 5.07 A continuous current capability against peak operational demands and thermal management capabilities.

Part Context

This device belongs to the NTMD6N02 series of dual N-channel MOSFETs from onsemi. It shares the SOIC-8 package form factor with related parts like the NTMD6N03R2G, which offers a higher 30 V rating. The series is designed for low-voltage, high-efficiency switching applications requiring compact integration of multiple channels.

Replacement Considerations

The NTMD6N03R2G serves as a direct pin-compatible alternative offering a higher 30 V breakdown voltage while maintaining similar current and resistance characteristics. Verify package dimensions and electrical parameters match application needs before substitution.