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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：32mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：950pF @ 24V
- Power - Max：1.29W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The NTMD6N03R2 is a dual N-channel enhancement mode Power MOSFET manufactured by onsemi. It features a SOIC-8 surface-mount package and operates with a drain-source breakdown voltage of 30 V. The device supports a continuous drain current of 6 A and maintains a maximum on-resistance of 32 mΩ. Gate-source voltage limits are specified at ±20 V, with a typical threshold voltage of 1.2 V. The component dissipates up to 2 W of power and functions within an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs in a single compact package
- Low on-resistance design optimized for efficient power switching applications
- Enhanced thermal performance supporting operation up to 150°C junction temperature
Applications
- DC-to-DC converter circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the exact suffix designation during procurement, as the provided model lacks the standard 'G' suffix often associated with lead-free compliance. Confirm RoHS status and specific datasheet revision directly with the manufacturer or authorized distributors to ensure compatibility with current production requirements.
Selection Notes
Select this component when a dual N-channel topology is required in a small form factor. Ensure the application current remains below 6 A and the voltage stress does not exceed 30 V. Consider the SOIC-8 thermal characteristics for heat dissipation needs in dense PCB layouts.
Part Context
This part belongs to the NTMD series of dual MOSFETs from onsemi. It shares architectural similarities with the NVMD6N03R2G but differs in specific packaging or compliance markings. The series targets low-voltage, high-efficiency switching applications requiring compact dual-channel solutions.
Replacement Considerations
The NVMD6N03R2G is a documented equivalent offering identical electrical specifications including 30 V rating and 32 mΩ on-resistance. Verify pinout compatibility and package dimensions before substitution.
