NTMD6N03R2G

Overview

The NTMD6N03R2G is a dual N-channel enhancement mode Power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 6 A. The device exhibits a low on-resistance (Rds(on)) of 32 mΩ at Vgs = 10 V, with a gate threshold voltage (Vgs(th)) of 1.2 V typical. Operating within a temperature range of -55 °C to +150 °C, it dissipates up to 2 W of power. Packaged in an SOIC-8 surface-mount format, the component includes built-in diodes for each channel.

Feature Summary

• Dual configuration with integrated body diodes for efficient switching applications
• Low on-resistance design minimizes conduction losses
• Enhanced thermal stability supporting high-temperature operation

Applications

• DC-DC converter circuits
• Power inverter systems
• Battery protection modules

Procurement Notes

Verify authenticity through authorized onsemi distributors or certified suppliers. Request original datasheets and material compliance certificates matching the specific part marking. Confirm package integrity and storage conditions prior to installation to ensure reliability.

Selection Notes

Select this component when a compact dual N-channel solution is required for 30 V systems. Compare Rds(on) values against load requirements and evaluate SOIC-8 thermal performance against PCB copper area constraints. Ensure gate drive voltages align with the specified threshold characteristics.

Part Context

This part belongs to the NTMD series of dual MOSFETs from onsemi. It shares the SOIC-8 footprint with single-channel variants like the NVMD6N03R2G but provides two independent channels. The series targets cost-sensitive consumer and industrial electronics requiring moderate current handling.

Replacement Considerations

Direct substitutes include NVMD6N03R2G for single-channel needs or other onsemi dual N-channel parts in SOIC-8 with comparable 30 V ratings. Verify pinout compatibility and electrical parameters before substitution.