NTMFD016N06CT1G

FET, MOSFET Arrays Overview

The NTMFD016N06CT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 5x6 (SO8FL-Dual) package. It features a drain-to-source voltage of 60 V and a continuous drain current of 32 A at TC = 25°C. The device exhibits a maximum RDS(on) of 16.3 mΩ at VGS = 10 V and ID = 5 A. Key electrical parameters include a total gate charge of 6.9 nC, input capacitance of 489 pF, and reverse recovery time of 27 ns. Thermal resistance junction-to-case is 4.1 °C/W. Operating temperature range spans -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a compact 5x6 mm footprint for space-constrained designs
• Low on-resistance minimizes conduction losses during steady-state operation
• Reduced gate charge and capacitance lower driver power consumption
• Compliant with RoHS standards and free from halogens and brominated flame retardants

FET, MOSFET Arrays Applications

• Power tools and battery-operated vacuums
• UAVs, drones, and material handling equipment
• Battery management systems and energy storage solutions
• Home automation devices

FET, MOSFET Arrays Procurement Notes

Verify the ordering suffix T1G corresponds to tape and reel packaging containing 1500 units per reel. Confirm the document revision date matches the required specification version. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Check for Pb-free and RoHS compliance markings on the reel or shipping documentation.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required in a small surface-mount package. Evaluate thermal performance based on the specific PCB copper area and ambient conditions, as junction-to-ambient resistance varies significantly with layout. Ensure the gate drive voltage supports the specified RDS(on) characteristics for optimal efficiency in switching applications.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's NTMFD series of dual MOSFETs designed for high-density power applications. The SO8FL-Dual package offers a reduced footprint compared to traditional SO-8 packages while maintaining robust thermal dissipation capabilities through an exposed pad design. It serves as a direct replacement for legacy dual MOSFET solutions requiring similar voltage and current ratings.

FET, MOSFET Arrays Replacement Considerations

Check pinout compatibility and thermal resistance values against existing designs. Verify that the replacement device meets the same voltage, current, and package dimensions. Review datasheet differences in gate charge and switching times to ensure circuit stability and efficiency are maintained without modification.