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NTMFD1D1N02X is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 14A 8PQFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for NTMFD1D1N02X
- Description：MOSFET 2N-CH 25V 14A 8PQFN
- Series：POWERTRENCH®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 240µA, 2.1V @ 850µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V, 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1080pF @ 12V, 4265pF @ 12V
- Power - Max：960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PQFN (5x6)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for NTMFD1D1N02X
FET, MOSFET Arrays Overview
The onsemi NTMFD1D1N02X is an asymmetric dual N-channel Power MOSFET utilizing PowerTrench and Power Clip technologies. It features a compact 5x6 mm PQFN8 (CASE 483AR) footprint. The device offers a drain-to-source voltage of 25 V. Q1 has a maximum RDS(on) of 3.0 mΩ at VGS=10V and 75 A continuous current capability. Q2 provides lower resistance with a maximum RDS(on) of 0.87 mΩ at VGS=10V and supports up to 178 A continuous current. Both channels exhibit low gate charge and capacitance for efficient switching.
FET, MOSFET Arrays Feature Summary
- Asymmetric dual configuration optimizing performance for distinct circuit roles
- Power Clip technology enhances thermal dissipation and electrical conductivity
- Compact 5x6 mm surface mount package suitable for space-constrained designs
FET, MOSFET Arrays Applications
- DC-DC Converters
- System Voltage Rails
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision and ordering suffixes when sourcing components. Confirm that the supplier provides documentation matching the CASE 483AR package dimensions. Ensure compliance with RoHS and halogen-free requirements as specified in the manufacturer's standard product declarations.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring high current density within a small PCB area. The asymmetric design allows independent optimization of high-side and low-side switches. Evaluate thermal resistance values based on actual copper pad sizes and board layout constraints rather than relying solely on steady-state ratings.
FET, MOSFET Arrays Part Context
This device belongs to onsemi's PowerTrench portfolio, designed for high-efficiency power management. It integrates advanced trench gate technology with a specialized clip bond package structure. This combination reduces internal resistance and improves heat transfer compared to traditional wire-bonded packages.
FET, MOSFET Arrays Replacement Considerations
Direct replacements must match the 25 V rating, PQFN8 footprint, and asymmetric current capabilities. Verify that substitute devices offer comparable RDS(on) values and thermal resistance characteristics to maintain system efficiency and reliability.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
