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NTMFD1D4N02P1E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 13A 8PQFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for NTMFD1D4N02P1E
- Description：MOSFET 2N-CH 25V 13A 8PQFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA, 2V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs：7.2nC @ 4.5V, 21.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1180pF @ 13V, 3603pF @ 13V
- Power - Max：960mW (Ta), 1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PQFN (5x6)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for NTMFD1D4N02P1E
FET, MOSFET Arrays Overview
The NTMFD1D4N02P1E is a dual N-channel Power Trench MOSFET manufactured by onsemi. It utilizes asymmetric Power Clip packaging to optimize thermal performance and electrical characteristics for high-current applications. The device features a low drain-source voltage rating of 25V, making it suitable for low-voltage power management systems. Key electrical parameters include a maximum continuous drain current of 130A at 25°C case temperature and a typical on-resistance (RDS(on)) of 0.7mΩ at VGS = 10V. The component integrates two independent channels within a single package to reduce board space and simplify circuit design.
FET, MOSFET Arrays Feature Summary
- Dual N-Channel Configuration
- Power Trench Technology
- Asymmetric Power Clip Packaging
FET, MOSFET Arrays Applications
- DC-DC Converters
- Load Switches
- Power Management Modules
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part number matches the exact pinout and thermal pad configuration required for your PCB layout. Cross-reference the date code with the distributor's inventory records to ensure component freshness and storage compliance.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual-channel solution is required for 25V DC-DC conversion or load switching applications. Evaluate the thermal resistance capabilities of the Power Clip package against your system's heat dissipation requirements. Ensure the gate drive voltage supports the specified RDS(on) conditions for optimal efficiency in your target application environment.
FET, MOSFET Arrays Part Context
This component belongs to onsemi's Power Trench MOSFET family, designed for high-efficiency power switching. The Power Clip technology distinguishes it from standard packages by providing enhanced thermal conductivity and lower inductance. It serves as a specialized solution for applications demanding high current density in a minimal footprint.
FET, MOSFET Arrays Replacement Considerations
Check for direct substitutes within the same Power Clip series, such as other NTMFD variants with similar voltage and current ratings. Verify pin compatibility and thermal interface dimensions before replacing existing components in a design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
