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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 17A 8PQFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
- Rds On (Max) @ Id, Vgs：5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V, 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1715pF @ 15V, 3825pF @ 15V
- Power - Max：1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PQFN (5x6)
- Grade：-
- Qualification：-
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Overview
The NTMFD2D4N03P8 is an asymmetric dual N-Channel Power MOSFET from onsemi, utilizing PowerTrench and Power Clip technologies. It integrates a control MOSFET (Q1) and a synchronous SyncFET (Q2) with an internally connected switch node for synchronous buck converter applications. Q1 features a maximum rDS(on) of 5.0 mΩ at VGS=10V/ID=17A and 6.5 mΩ at VGS=4.5V/ID=14A. Q2 offers a lower maximum rDS(on) of 2.4 mΩ at VGS=10V/ID=25A and 3.0 mΩ at VGS=4.5V/ID=22A. Both devices have a 30V drain-source voltage rating and are housed in a PQFN8 Power Clip package.
Feature Summary
- Asymmetric Dual Configuration: Integrates optimized control (Q1) and synchronous rectifier (Q2) MOSFETs within a single package to enhance power efficiency.
- Internally Connected Switch Node: The switch node is internally bonded, simplifying layout and routing while reducing circuit inductance.
- Low Inductance Packaging: Utilizes the Power Clip package design to shorten rise/fall times and minimize switching losses.
- Reduced Switch Node Ringing: MOSFET integration enables optimum layout for lower circuit inductance and reduced ringing.
Applications
- Computing
- Communications
- General Purpose Point of Load
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct reel size and tape width specifications. Confirm that the device marking matches the expected 'D2D4' identifier. Ensure compliance with Pb-Free and RoHS requirements if environmental standards are mandatory for the target assembly process.
Selection Notes
Select this component for synchronous buck converters requiring optimized layout and low switching losses. Choose Q1 for the high-side control role and Q2 for the low-side synchronous rectification due to its lower on-resistance. Evaluate thermal resistance values based on the specific PCB copper pad area and FR-4 board dimensions used in the design.
Part Context
This device belongs to onsemi's PowerTrench and SyncFET product families, designed for high-efficiency power management. It represents an evolution in dual MOSFET integration, specifically targeting applications where space constraints and switching performance are critical. The Power Clip packaging technology distinguishes it from standard leaded or smaller surface-mount packages.
Replacement Considerations
Direct replacements must match the 30V rating, PQFN8 Power Clip package, and asymmetric rDS(on) characteristics. Verify pinout compatibility, particularly the internal switch node connection. Check thermal resistance and gate charge parameters to ensure equivalent switching performance in the existing circuit design.
