NTMFD4901NFT3G

FET, MOSFET Arrays Overview

The NTMFD4901NFT3G is a dual N-channel logic-level MOSFET array manufactured by onsemi. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to 150°C. The device integrates two independent channels in an 8-DFN (5x6) package, designated as SO8FL. Key electrical characteristics include a maximum gate threshold voltage of 2.2V at 250µA and a typical gate charge of 9.7nC at 4.5V. Continuous drain current ratings are specified at 10.3A and 17.9A for the respective channels, with a maximum power dissipation of 1.1W and 1.2W. The component is RoHS compliant and classified under ECCN EAR99.

FET, MOSFET Arrays Feature Summary

• Dual asymmetric N-channel configuration integrated into a single surface-mount package
• Logic-level gate drive capability for efficient control with low input voltage signals
• Integrated Schottky diodes associated with each channel for freewheeling applications
• Enhanced thermal performance through a compact 8-DFN footprint design

FET, MOSFET Arrays Applications

• Low-side switching in DC-DC converter circuits
• Load management in portable battery-powered devices
• Synchronous rectification in point-of-load power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official manufacturer documentation, as the T3G designation may indicate distinct packaging or lot traceability compared to standard variants. Confirm end-of-life status and last-time buy dates directly with onsemi authorized distributors. Ensure compliance with REACH and RoHS directives relevant to the manufacturing region. Validate that the 8-DFN package dimensions match the target PCB footprint requirements before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution with logic-level compatibility is required in a space-constrained design. The 30V rating suits low-voltage systems, while the low gate charge supports high-frequency switching operations. Evaluate the thermal resistance of the 8-DFN package against the expected power dissipation limits. Consider the asymmetric current ratings if the application demands unequal load handling between the two internal channels.

FET, MOSFET Arrays Part Context

This part belongs to the NTMFD4901NF series of dual MOSFET arrays from onsemi. The series is designed for applications requiring compact footprints and efficient power switching. The NTMFD4901NFT1G is a closely related variant often cited in technical literature, sharing identical electrical specifications but potentially differing in reel quantity or specific manufacturing lot codes. Both parts utilize the same SO8FL package and core die architecture.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers for the NTMFD4901NFT3G are not available in the provided reference data. Engineers should consult onsemi's official cross-reference tools or contact authorized distributors for verified alternatives. Ensure any replacement maintains the 30V Vds rating, 8-DFN package outline, and logic-level gate threshold specifications.