NTMFD4902NFT1G

FET, MOSFET Arrays Overview

The NTMFD4902NFT1G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a PowerTrench technology silicon construction housed in an 8-DFN (5x6 mm) SO8FL package. The device supports a drain-source voltage of 30 V and offers continuous drain currents ranging from 18.2 A to higher transient values depending on thermal conditions. Key electrical parameters include a maximum on-resistance of 8 mΩ at 10 V gate drive, a gate threshold voltage of 2.2 V, and a total gate charge of 11.5 nC. Operating temperatures span from -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with integrated Schottky diodes for asymmetric switching applications
• Logic-level gate drive capability enabling direct interface with standard logic outputs
• Compact 8-DFN surface-mount package designed for high-density PCB layouts

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Low-voltage motor control circuits
• Power management modules requiring compact form factors

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance and REACH registration details prior to integration. Validate package markings against official datasheet specifications to ensure correct part identification during assembly processes.

FET, MOSFET Arrays Selection Notes

Evaluate thermal resistance characteristics relative to the target PCB copper area. Ensure gate drive voltage exceeds the minimum threshold for optimal Rds(on) performance. Consider the asymmetric channel design when selecting complementary P-channel devices for half-bridge configurations.

FET, MOSFET Arrays Part Context

This component belongs to the NTMFD4902NF series of dual MOSFETs. It shares the SO8FL footprint family with related single and dual channel variants. The specific suffix indicates tape and reel packaging suitable for automated surface-mount assembly lines.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible substitutes within the same manufacturer portfolio should be verified against electrical parameter tolerances. Cross-reference alternative manufacturers only if package dimensions and thermal characteristics match exactly.