FET, MOSFET Arrays NTMFD4902NFT3G product image

NTMFD4902NFT3G

  • Description:MOSFET 2N-CH 30V 10.3A 8DFN
  • Series:-

SKU:296ce19e9efb Category: Brand:

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NTMFD4902NFT3G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 10.3A 8DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTMFD4902NFT3G

  • Description:MOSFET 2N-CH 30V 10.3A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual), Schottky
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:10.3A, 13.3A
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1150pF @ 15V
  • Power - Max:1.1W, 1.16W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTMFD4902NFT3G

NTMFD4902NFT3G

FET, MOSFET Arrays Overview

The NTMFD4902NFT3G is a dual N-channel Power MOSFET from onsemi, featuring an integrated Schottky diode in each channel. It utilizes the PowerTrench technology and is housed in an 8-DFN surface-mount package. The device supports a drain-source voltage of 30V with a continuous drain current of 18.2A. Key electrical parameters include a maximum on-resistance of 8mΩ at VGS=10V and a gate threshold voltage ranging from 1.3V to 2.2V. Thermal performance is characterized by a junction-to-ambient resistance of 50°C/W under standard test conditions.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration with integrated Schottky diodes for synchronous rectification
  • PowerTrench technology optimized for low conduction and switching losses
  • Lead-free and halogen-free construction compliant with RoHS standards

FET, MOSFET Arrays Applications

  • DC-DC converter circuits requiring synchronous rectification
  • Low voltage power management systems
  • Battery protection and load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm packaging type and compliance status. Ensure that the component source is an authorized distributor to guarantee authenticity. Cross-reference the part number with official onsemi documentation to validate technical specifications before integration into the design.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a compact dual MOSFET solution with built-in body diodes. Evaluate the thermal requirements based on the specified junction-to-ambient resistance. Confirm that the 30V voltage rating and 18.2A current capacity align with the system's operational limits and transient stress conditions.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench family of single and dual N-channel MOSFETs. It is designed for high-efficiency power switching applications where space constraints and thermal performance are critical. The integration of Schottky diodes reduces the need for external components, simplifying the circuit layout.

FET, MOSFET Arrays Replacement Considerations

The NTMFD4902NF is listed as a similar part number within the same product family. Verify pinout compatibility and electrical parameter equivalence before substitution.

NTMFD4902NFT3GNTMFD4902NFT3G

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